Last modified: 24 Jun 2020 14:31
This course comprises two half units, Nuclear physics and semiconductor physics, both of huge technological importance. In the nuclear physics section, the competing forces that act within the nucleus will be examined and how this leads to the concept of binding energy. How binding energy can be liberated in fusion and fission processes and reactors will then be explored. In semiconductor physics, the physics of charge carriers and charge transport in semiconductors will be examined and how this can be utilized in a huge variety of semiconductor devices such as diodes and transistors.
|Session||Second Sub Session||Credit Points||15 credits (7.5 ECTS credits)|
The course will develop the basic ideas of band theory, followed by the development of semiconductor physics which builds on both Boltzmann and Fermi-Dirac statistics. The underlying concepts in semiconductor physics will develop from the movement of charge in solids, number densities of charge carriers, equilibrium then non-equilibrium semiconductors and will conclude with consolidation of these ideas through their application in the pn junction diode. In the second half, Nuclear models, nuclear shells and magic numbers; radioactive decay; fission, fusion, nuclear reactions and types of reactors; production of radionuclides; reactors, linear accelerators and cyclotrons will be covered.
Information on contact teaching time is available from the course guide.
|Assessment Weeks||Feedback Weeks|
Feedback in assessments will be within two weeks (usually one week) for written assessments and immediately in formative tutorial tasks.
There are no assessments for this course.
|Knowledge Level||Thinking Skill||Outcome|