Dr Geoffrey Dunn

Dr Geoffrey Dunn

Senior Lecturer

Overview
Dr Geoffrey Dunn
Dr Geoffrey Dunn

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work +44 (0)1224 272805
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Biography

Head of physics. After his first degree in astrophysics, he obtained a PhD in Positron physics at London University in 1990. Since then he has developed an extensive suite of semiconductor device Monte Carlo simulation software and has researched into photodetectors, impact ionisation and Gunn oscillators working at Helsinki, Norwich, Sheffield and Loughborough Universities. Currently he is working to develop a planar Gunn diode technology for the generation of T-Rays (THz frequency radiation) and investigate novel cooling methods for semiconductor devices.

Publications

Publications 

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  • Mindil, A, Dunn, GM, Khalid, A & Oxley, CH 2020, 'Investigation of Contact Edge Effects in the Channel of Planar Gunn Diodes', IEEE Transactions on Electron Devices, vol. 67, no. 1, 8913625, pp. 53-56. [Online] DOI: https://doi.org/10.1109/TED.2019.2951301
  • Akura, M & Dunn, G 2019, 'Investigating the role of band offset on the property and op-eration of the potential well barrier diodes', physica status solidi (c), vol. 256, no. 5, 1800284. [Online] DOI: https://doi.org/10.1002/pssb.201800284
  • Maricar, MI, Khalid, A, Dunn, G, Greedy, S, Thomas, D, Cumming, DRS & Oxley, CH 2018, 'An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator', Microwave and Optical Technology Letters, vol. 60, no. 9, pp. 2144-2148. [Online] DOI: https://doi.org/10.1002/mop.31312
  • Akura, M, Dunn, G & Missous, M 2018, 'Comparative Study of Heterosturcture Barrier Diodes in the GaAs/AlGaAs System', International Journal of Materials Science and Applications, vol. 7, no. 4, pp. 161-166. [Online] DOI: https://doi.org/10.11648/j.ijmsa.20180704.17
  • Akura, M & Dunn, GM 2018, 'Investigating effect of temperature on barrier height of PWB diodes', Electronics Letters, vol. 54, no. 1, el.2017.3353, pp. 42-43. [Online] DOI: https://doi.org/10.1049/el.2017.3353
  • Akura, M, Dunn, G & Missous, M 2017, 'A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications', IEEE Transactions on Electron Devices, vol. 64, no. 10, pp. 4031-4035. [Online] DOI: https://doi.org/10.1109/TED.2017.2733724
  • Akura, M, Dunn, G, Sexton, J & Missous, M 2017, 'GaAs/AlGaAs potential well barrier diodes: Novel diode for detector and mixer applications', physica status solidi (c), vol. 214, no. 10, 1700290. [Online] DOI: https://doi.org/10.1002/pssa.201700290
  • Akura, M, Dunn, G, Missous, M & Sexton, J 2017, 'Potential Well Barrier Diodes for Submillimeter Wave and High Frequency Applications', IEEE Electron Device Letters, vol. 38, no. 4, pp. 438-440. [Online] DOI: https://doi.org/10.1109/LED.2017.2673662
  • Glover, J, Khalid, A, Cumming, D, Dunn, GM, Kuball, M, Bajo, MM & Oxley, CH 2017, 'Thermal Profiles Within the Channel of Planar Gunn Diodes Using Micro-Particle Sensors', IEEE Electron Device Letters, vol. 38, no. 9, pp. 1325-1327. [Online] DOI: https://doi.org/10.1109/LED.2017.2731961
  • Maricar, MI, Khalid, A, Dunn, G, Cumming, D & Oxley, CH 2014, 'Experimentally estimated dead space for GaAs and InP based planar Gunn diodes', Semiconductor Science and Technology, vol. 30, no. 1, 114502. [Online] DOI: https://doi.org/10.1088/0268-1242/30/1/012001
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