Dr Geoffrey Dunn

Dr Geoffrey Dunn
Dr Geoffrey Dunn

Dr Geoffrey Dunn

Senior Lecturer

About

Biography

Head of physics. After his first degree in astrophysics, he obtained a PhD in Positron physics at London University in 1990. Since then he has developed an extensive suite of semiconductor device Monte Carlo simulation software and has researched into photodetectors, impact ionisation and Gunn oscillators working at Helsinki, Norwich, Sheffield and Loughborough Universities. Currently he is working to develop a planar Gunn diode technology for the generation of T-Rays (THz frequency radiation) and investigate novel cooling methods for semiconductor devices.

Publications

Page 5 of 5 Results 41 to 48 of 48

  • Human campybacteriosis in Scotland: seasonality, regional trends and bursts of infection

    Dunn, G. M., Miller, G., Smith-Palmer, A.
    Epidemiology and Infection, vol. 132, no. 4, pp. 585-593
    Contributions to Journals: Articles
  • A theoretical study of differing active region doping profiles for W-band (75-110 GHz) InP Gunn diodes

    Dunn, G. M., Kearney, M. J.
    Semiconductor Science and Technology, vol. 18, no. 8, pp. 794-802
    Contributions to Journals: Articles
  • Simulated current response in avalanche photodiodes

    Hambleton, P. J., Plimmer, S. A., David, J. R., Rees, G. J., Dunn, G. M.
    Journal of Physics D: Applied Physics, vol. 91, no. 4, pp. 2107-2111
    Contributions to Journals: Articles
  • Monte Carlo Modelling of multiple-transit-region Gunn diodes

    Teoh, Y. P., Dunn, G. M., Priestley, N., Carr, M.
    Semiconductor Science and Technology, vol. 17, pp. 1090-1095
    Contributions to Journals: Articles
  • Multiple Transit Region Gunn Diodes

    Dunn, G. M., Teoh, Y. P.
    Electronics Letters, vol. 38
    Contributions to Journals: Articles
  • Current instabilities in power HEMTs

    Dunn, G. M., Phillips, A.
    Semiconductor Science and Technology, vol. 16, pp. 562-566
    Contributions to Journals: Articles
  • Gunn instabilities in power HEMTs

    Dunn, G. M., Phillips, A.
    Electronics Letters, vol. 37, pp. 530-531
    Contributions to Journals: Articles
  • Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes

    Dunn, G. M., Ghin, R., Rees, G. J., David, J. P. R., Plimmer, S., Herbert, D. C.
    Semiconductor Science and Technology, vol. 14, pp. 994-1000
    Contributions to Journals: Articles
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