Dr Geoffrey Dunn
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Dr Geoffrey Dunn
Senior Lecturer
- About
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Biography
Head of physics. After his first degree in astrophysics, he obtained a PhD in Positron physics at London University in 1990. Since then he has developed an extensive suite of semiconductor device Monte Carlo simulation software and has researched into photodetectors, impact ionisation and Gunn oscillators working at Helsinki, Norwich, Sheffield and Loughborough Universities. Currently he is working to develop a planar Gunn diode technology for the generation of T-Rays (THz frequency radiation) and investigate novel cooling methods for semiconductor devices.
- Publications
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Page 1 of 5 Results 1 to 10 of 48
Investigation of THz Frequency Shaped Anode Planar Gunn Diodes Operating in Delayed Mode
IEEE Journal of the Electron Devices Society, vol. 8, pp. 1072-1075Contributions to Journals: ArticlesInvestigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodes
IEEE Transactions on Electron Devices, vol. 67, no. 5, pp. 1946-1951Contributions to Journals: ArticlesInvestigation of Contact Edge Effects in the Channel of Planar Gunn Diodes
IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 53-56Contributions to Journals: Articles- [ONLINE] DOI: https://doi.org/10.1109/TED.2019.2951301
- [ONLINE] View publication in Scopus
Investigating the role of band offset on the property and op-eration of the potential well barrier diodes
physica status solidi (c), vol. 256, no. 5, 1800284Contributions to Journals: Articles- [ONLINE] DOI: https://doi.org/10.1002/pssb.201800284
- [OPEN ACCESS] http://aura.abdn.ac.uk/bitstream/2164/13477/1/Revised_manuscript.pdf
- [ONLINE] View publication in Scopus
- [ONLINE] View publication in Mendeley
Hot electron effects on the operation of potential well barrier diodes
Journal of Semiconductors, vol. 40, no. 12, 122101Contributions to Journals: Articles- [ONLINE] DOI: https://doi.org/10.1088/1674-4926/40/12/122101
- [ONLINE] View publication in Scopus
An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator
Microwave and Optical Technology Letters, vol. 60, no. 9, pp. 2144-2148Contributions to Journals: Articles- [ONLINE] DOI: https://doi.org/10.1002/mop.31312
- [ONLINE] https://onlinelibrary.wiley.com/doi/full/10.1002/mop.31312
Comparative Study of Heterosturcture Barrier Diodes in the GaAs/AlGaAs System
International Journal of Materials Science and Applications, vol. 7, no. 4, pp. 161-166Contributions to Journals: ArticlesInvestigating effect of temperature on barrier height of PWB diodes
Electronics Letters, vol. 54, no. 1, pp. 42-43Contributions to Journals: ArticlesA Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications
IEEE Transactions on Electron Devices, vol. 64, no. 10, pp. 4031-4035Contributions to Journals: ArticlesGaAs/AlGaAs potential well barrier diodes: Novel diode for detector and mixer applications
physica status solidi (c), vol. 214, no. 10, 1700290Contributions to Journals: Articles- [ONLINE] DOI: https://doi.org/10.1002/pssa.201700290
- [OPEN ACCESS] http://aura.abdn.ac.uk/bitstream/2164/10760/1/PSS_paper_Geoff_Dunn.doc